eGaN Basics

eGaN® Basics

EPC

This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.

Related Parts

ImmagineCodice produttoreDescrizioneFunzioneEmbeddedCI/componente utilizzatoQuantità disponibilePrezzoVedi i dettagli
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Driver a semiponte H (FET esterno)NoEPC20150 - Immediatamente$77.73Vedi i dettagli
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Driver a semiponte H (FET esterno)NoEPC20010 - Immediatamente$102.56Vedi i dettagli
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Driver a semiponte H (FET esterno)NoEPC80070 - Immediatamente$124.16Vedi i dettagli
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Driver a semiponte H (FET esterno)NoEPC20010 - Immediatamente$77.73Vedi i dettagli
PTM Published on: 2010-09-27

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.