eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

ImmagineCodice produttoreDescrizioneFunzioneEmbeddedCI/componente utilizzatoQuantità disponibilePrezzoVedi i dettagli
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Driver a semiponte H (FET esterno)NoEPC20150 - Immediatamente$77.73Vedi i dettagli
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Driver a semiponte H (FET esterno)NoEPC20010 - Immediatamente$102.56Vedi i dettagli
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Driver a semiponte H (FET esterno)NoEPC80070 - Immediatamente$124.16Vedi i dettagli
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Driver a semiponte H (FET esterno)NoEPC20010 - Immediatamente$77.73Vedi i dettagli
PTM Published on: 2010-10-06

Related Articles and Blogs

Prodotti e risorse GaN per l'alimentazione disponibili su DigiKey GaN si sta facendo prepotentemente strada nella progettazione di alimentazione. Questo blog offre approfondimenti e informazioni sui alcuni prodotti e risorse GaN attualmente disponibili su DigiKey.
High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.