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FP25R12W1T7_B11 1200 V, 25 A PIM IGBT Module | Datasheet Preview

Infineon Technologies’ optimized technologies match the needs of higher efficiency for electrical motors. The FP25R12W1T7_B11 EasyPIM™ module with TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diode and PressFIT offers operation at a temperature of +175°C under overload conditions with a lowered on-state voltage to bring a significant reduction in losses to target applications. Using the PressFIT contact technology, these modules enable the reliable, solder-less mounting of power modules to meet the demands of lead-free technology. With a 1200 V voltage rating, a nominal current rating of 25 amps, and a low on-state collector-to-emitter voltage drop, this device offers a high power density and low IGBT power dissipation during conduction time. The FP25R12W1T7_B11 is qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 making this ideal for auxiliary inverters, air conditioning, and industrial motor drives.

1/18/2022 4:18:13 PM

Part List

ImmagineCodice produttoreDescrizioneQuantità disponibileVedi i dettagli
IC IGBT DVR 1200V 2A DSO161ED020I12F2XUMA1IC IGBT DVR 1200V 2A DSO160Vedi i dettagli
IC IGBT GATE DRIVER UL 8DSOP1EDC60H12AHXUMA1IC IGBT GATE DRIVER UL 8DSOP0Vedi i dettagli
IGBT MODULE 1200V 16A 24PWRDIPIM818MCCXKMA1IGBT MODULE 1200V 16A 24PWRDIP0Vedi i dettagli
MOSFET MODULE 1200V 200AFF6MR12W2M1B11BOMA1MOSFET MODULE 1200V 200A0Vedi i dettagli
IGBT MOD 1200V 100A 20MW EASYFS100R12W2T7B11BOMA1IGBT MOD 1200V 100A 20MW EASY0Vedi i dettagli
IGBT MODULE 1200V 25A 20MW EASYFP25R12W1T7B11BPSA1IGBT MODULE 1200V 25A 20MW EASY33 - ImmediatamenteVedi i dettagli

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Sistemi di comando motori ottimali La tecnologia SOI (Silicon-on-insulator) di Infineon Technologies offre tecnologia a traslazione di livello ad alta tensione per vantaggi unici e protezione robusta.
MOSFET CoolSiC™ al carburo di silicio I MOSFET CoolSiC e i gate driver in CI EiceDRIVER di Infineon Technologies sfruttano appieno le eccellenti caratteristiche della tecnologia al carburo di silicio (SiC).
TRENCHSTOP™ IGBT7 TRENCHSTOP™ IGBT7 di Infineon offre una densità di potenza che può essere ottenuta con minori perdite statiche, maggiore densità di potenza e commutazione più graduale.

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