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DI110N04PQ N-Channel Power MOSFET
Diotec's N-channel power MOSFET features low on-state resistance, fast switching times, and very low thermal resistance
Diotec's DI110N04PQ-AQ AECQ101 qualified, N-channel power MOSFET comes in a compact 5 mm x 6 mm power QFN package. At nominal 110 A and 40 V, it features low on-state resistance (RDS(ON)), fast switching times, and very low thermal resistance. The logic level threshold voltage provides a flexible gate drive. It is also compatible with µController, while its very low gate charge and output charge reduces switching power losses and improves overall efficiency. It has an operating junction temperature range from -55°C to +175°C. The DI110N04PQ-AQ is ideally suited for all kinds of applications, including DC/DC converters, synchronous rectifiers, power tools, BLDC drives, and more.
Features
- Low profile, space-saving package
- Logic level gate drive
- Avalanche rated
- 100% avalanche tested
- Active parts
- Max. junction temperature of +175°C
Specifications
- Drain-source voltage (VDSS): 40 V
- Continuous drain current (ID): 100 A
- RDS(ON): 2.5 mΩ maximum
- Drain-source leakage current (IDSS): 1 µA
- Continuous gate-source voltage (VGSS): ±20 V
- Power dissipation (Ptot): 55.5 W
- Peak drain current (IDM): 450 A
- Single pulse avalanche energy (EAS): 123.5 mJ
- Thermal resistance (RthC): <2.7 K/W
- Operating junction temperature range (Tj): -55°C to +175°C
- 5 mm x 6 mm power QFN package
App Notes
Applications
- DC/DC converters
- Power supplies
- DC drives
- Power tools
- Synchronous rectifiers
- Battery chargers
DI110N04PQ N-Channel Power MOSFET
| Abbildung | Hersteller-Teilenummer | Beschreibung | Verfügbare Menge | Preis | Details anzeigen | |
|---|---|---|---|---|---|---|
 |  | DI110N04PQ-AQ | MOSFET, POWERQFN 5X6, 40V, 110A, | 4786 - Sofort | $1.45 | Details anzeigen |
Veröffentlicht: 2023-07-25
