Name: SISS26LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS26LDN-T1-GE3TR-ND
Price: 2.135 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISS26LDN-T1-GE3
DigiKey Part Number	SISS26LDN-T1-GE3TR-ND - Tape & Reel (TR) SISS26LDN-T1-GE3CT-ND - Cut Tape (CT) SISS26LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS26LDN-T1-GE3
Description	MOSFET N-CH 60V 23.7A/81.2A PPAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 30 V
Part Status Active	Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 81.2A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISS26
Rds On (Max) @ Id, Vgs 4.3mOhm @ 15A, 10V

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

In-Stock: 18 260

Check for Additional Incoming Stock

Quantity

All prices are in EUR

Cut Tape (CT) & Digi-Reel®

* All Digi-Reel orders will add a € 5,50 reeling fee.

Tape & Reel (TR)

Manufacturers Standard Package

Unit Price without VAT:	€ 1,75000
Unit Price with VAT:	€ 2,13500

SISS26LDN-T1-GE3