SIHP21N65EF-GE3 is out of stock and can be placed on backorder.
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N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP21N65EF-GE3

DigiKey Part Number
SIHP21N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP21N65EF-GE3
Description
MOSFET N-CH 650V 21A TO220AB
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Type
Power Dissipation (Max)
208W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (11)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCP190N65Fonsemi569FCP190N65F-ND€ 4,74000Similar
FCP190N65S3R0onsemi266488-FCP190N65S3R0-ND€ 2,37000Similar
IPP60R170CFD7XKSA1Infineon Technologies2 000IPP60R170CFD7XKSA1-ND€ 2,97000Similar
IPP65R190E6XKSA1Rochester Electronics, LLC56 8902156-IPP65R190E6XKSA1-ND€ 1,81879Similar
IXFP24N60XIXYS0IXFP24N60X-ND€ 2,62577Similar
In-Stock: 0
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All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€ 5,02000€ 5,02
10€ 3,35000€ 33,50
100€ 2,40200€ 240,20
500€ 1,99756€ 998,78
1 000€ 1,86775€ 1 867,75
2 000€ 1,77842€ 3 556,84
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 5,02000
Unit Price with VAT:€ 6,12440