Name: TK65E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK65E10N1S1X-ND
Price: 4.7092 EUR
Availability: InStock

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TK65E10N1,S1X
DigiKey Part Number	TK65E10N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK65E10N1,S1X
Description	MOSFET N CH 100V 148A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 148A (Ta) 192W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK65E10N1,S1X Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V
Part Status Active	Power Dissipation (Max) 192W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 148A (Ta)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK65E10
Rds On (Max) @ Id, Vgs 4.8mOhm @ 32.5A, 10V

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Tube

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Unit Price without VAT:	€ 3,86000
Unit Price with VAT:	€ 4,70920

TK65E10N1,S1X