Name: TK12E80W,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK12E80WS1X-ND
Price: 5.5022 EUR
Availability: OutOfStock

TK12E80W,S1X is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Infineon Technologies

In Stock: 0

Unit Price: € 0,00000

Similar

IXYS

In Stock: 0

Unit Price: € 2,14727

Similar

IXYS

In Stock: 0

Unit Price: € 1,56420

Similar

IXYS

In Stock: 0

Unit Price: € 1,92020

Similar

IXYS

In Stock: 0

Unit Price: € 2,17167

Similar

STMicroelectronics

In Stock: 1 317

Unit Price: € 3,55000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK12E80W,S1X
DigiKey Part Number	TK12E80WS1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK12E80W,S1X
Description	MOSFET N-CH 800V 11.5A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 11.5A (Ta) 165W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK12E80W,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK12E80