Name: TK10J80E,S1E
Brand: Toshiba Semiconductor and Storage
SKU: TK10J80ES1E-ND
Price: 5.2948 EUR
Availability: OutOfStock

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TK10J80E,S1E
DigiKey Part Number	TK10J80ES1E-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK10J80E,S1E
Description	MOSFET N-CH 800V 10A TO3P
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 10A (Ta) 250W (Tc) Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	TK10J80E,S1E Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Series π-MOSVIII	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Part Status Active	Power Dissipation (Max) 250W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-3P(N)
Current - Continuous Drain (Id) @ 25°C 10A (Ta)	Package / Case TO-3P-3, SC-65-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK10J80
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	€ 4,34000
Unit Price with VAT:	€ 5,29480

TK10J80E,S1E