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STP12N65M2

DigiKey Part Number
STP12N65M2-ND
Manufacturer
Manufacturer Product Number
STP12N65M2
Description
POWER MOSFET
Customer Reference
Detailed Description
N-Channel 650 V 8A (Tc) 85W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
STP12N65M2 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.7 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
Base Product Number
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This product requires a manufacturer-approved quote before it can be ordered. Orders must meet the manufacturer’s standard package quantity, may be subject to extended lead times, and cannot be canceled or returned. Quotes are typically processed within 3–5 business days after submission.
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