N-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads
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N-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads
TO-247-3

SCTWA10N120

DigiKey Part Number
SCTWA10N120-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTWA10N120
Description
IC POWER MOSFET 1200V HIP247
Customer Reference
Detailed Description
N-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads
EDA/CAD Models
SCTWA10N120 Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
3.5V @ 250µA (Typ)
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
HiP247™ Long Leads
Package / Case
TO-247-3
Base Product Number
SCTWA10
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In-Stock: 497
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€ 8,50000€ 8,50
10€ 6,66400€ 66,64
30€ 6,12733€ 183,82
120€ 5,64858€ 677,83
270€ 5,59711€ 1 511,22
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 8,50000
Unit Price with VAT:€ 10,37000