Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
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MJD112-1G

DigiKey Part Number
MJD112-1GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
MJD112-1G
Description
TRANS NPN DARL 100V 2A IPAK
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
Datasheet
 Datasheet
EDA/CAD Models
MJD112-1G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
IPAK
Base Product Number
MJD112
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In-Stock: 5 845
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MAXIMUM PURCHASE LIMIT
Tube:2850
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€ 1,38000€ 1,38
75€ 0,61067€ 45,80
150€ 0,54653€ 81,98
525€ 0,45516€ 238,96
1 050€ 0,41560€ 436,38
2 025€ 0,38392€ 777,44
5 025€ 0,34784€ 1 747,90
10 050€ 0,33251€ 3 341,73
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 1,38000
Unit Price with VAT:€ 1,68360