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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 2055 pF @ 25 V |
Part Status Obsolete | Power Dissipation (Max) 218W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 500 V | Supplier Device Package TO-3PN |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 480mOhm @ 7.5A, 10V |
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Substitutes (1)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| TK39J60W,S1VQ | Toshiba Semiconductor and Storage | 6 | TK39J60WS1VQ-ND | € 10,22000 | Similar |
Obsolete
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Quantity
All prices are in EUR
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 450 | € 1,52898 | € 688,04 |
| Unit Price without VAT: | € 1,52898 |
|---|---|
| Unit Price with VAT: | € 1,86536 |
