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FDP75N08A is Obsolete and no longer manufactured.
Available Substitutes:
MFR Recommended
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 4468 pF @ 25 V |
Part Status Obsolete | Power Dissipation (Max) 137W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 75 V | Supplier Device Package TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 10V |
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Substitutes (5)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| SPP80P06PHXKSA1 | Infineon Technologies | 9 711 | 448-SPP80P06PHXKSA1-ND | € 4,60000 | MFR Recommended |
| IRFB3607PBF | Rochester Electronics, LLC | 544 | 2156-IRFB3607PBF-ND | € 0,64254 | Similar |
| STP75NF75 | STMicroelectronics | 0 | 497-2788-5-ND | € 3,41000 | Similar |
| STP76NF75 | STMicroelectronics | 922 | 497-12619-5-ND | € 2,60000 | Similar |
| TK40E06N1,S1X | Toshiba Semiconductor and Storage | 31 | TK40E06N1S1X-ND | € 1,68000 | Similar |
Obsolete
