N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3
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FCH110N65F-F155

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FCH110N65F-F155-ND
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onsemi
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FCH110N65F-F155
cms-description
MOSFET N-CH 650V 35A TO247
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28 Weeks
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N-Channel 650 V 35A (Tc) 357W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
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FCH110N65F-F155 Models
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Mfr
onsemi
Series
FRFET®, SuperFET® II
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4895 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
357W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
FCH110
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In-Stock: 460
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Tube
cms-quantityUnit Pricecms-ext-price
1€ 7,81000€ 7,81
30€ 4,58600€ 137,58
120€ 3,87858€ 465,43
510€ 3,49765€ 1 783,80
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 7,81000
Unit Price with VAT:€ 9,52820