Name: G3R45MT17D
Brand: Navitas Semiconductor, Inc.
SKU: 1913-G3R45MT17D-ND
Price: 40.4674 EUR
Availability: InStock

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G3R45MT17D
cms-digikey-product-number	1913-G3R45MT17D-ND
cms-manufacturer	Navitas Semiconductor, Inc.
cms-manufacturer-product-number	G3R45MT17D
cms-description	SIC MOSFET N-CH 61A TO247-3
cms-standard-lead-time	20 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-3
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Navitas Semiconductor, Inc.
Series	G3R™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id	2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	182 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	4523 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	438W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	G3R45