Name: IXSJ80N120R1K
Brand: IXYS
SKU: 238-IXSJ80N120R1K-ND
Price: 36.1608 EUR
Availability: InStock

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IXSJ80N120R1K
DigiKey Part Number	238-IXSJ80N120R1K-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSJ80N120R1K
Description	1200V 18M (30A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 85A (Tc) 223.2W (Tc) Through Hole ISO247-4L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.8V @ 22.2mA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 155 nC @ 18 V
Packaging Tube	Vgs (Max) +21V, -4V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4556 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 223.2W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 85A (Tc)	Supplier Device Package ISO247-4L
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 23.4mOhm @ 40A, 18V

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Unit Price without VAT:	€ 29,64000
Unit Price with VAT:	€ 36,16080

IXSJ80N120R1K