Name: IPD33CN10NGATMA1
Brand: Infineon Technologies
SKU: IPD33CN10NGATMA1TR-ND
Price: 1.7202 EUR
Availability: InStock

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IPD33CN10NGATMA1
DigiKey Part Number	IPD33CN10NGATMA1TR-ND - Tape & Reel (TR) IPD33CN10NGATMA1CT-ND - Cut Tape (CT) IPD33CN10NGATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD33CN10NGATMA1
Description	MOSFET N-CH 100V 27A TO252-3
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD33CN10NGATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 29µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 50 V
Part Status Active	Power Dissipation (Max) 58W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 27A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPD33CN10
Rds On (Max) @ Id, Vgs 33mOhm @ 27A, 10V

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