PG-TO220-FP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPAN65R650CEXKSA1

DigiKey Part Number
IPAN65R650CEXKSA1-ND
Manufacturer
Manufacturer Product Number
IPAN65R650CEXKSA1
Description
MOSFET N-CH 650V 10.1A TO220
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPAN65R650CEXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
Base Product Number
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In-Stock: 16
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All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€ 1,40000€ 1,40
50€ 0,66520€ 33,26
100€ 0,59350€ 59,35
500€ 0,46762€ 233,81
1 000€ 0,42710€ 427,10
2 000€ 0,39302€ 786,04
5 000€ 0,35614€ 1 780,70
10 000€ 0,35358€ 3 535,80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€ 1,40000
Unit Price with VAT:€ 1,70800