STGSH80HB65DAG Automotive-Grade ACEPACK IGBT

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Product Highlights > STGSH80HB65DAG Automotive-Grade ACEPACK IGBT

            STGSH80HB65DAG Automotive-Grade ACEPACK IGBT
                    STMicroelectronics' device combines two IGBTs and diodes in half-bridge topology
    

Image of STMicroelectronics STGSH80HB65DAG Automotive-Grade ACEPACK IGBT STMicroelectronics' STGSH80HB65DAG device combines two IGBTs and diodes in a half-bridge topology mounted on a very compact, rugged, easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized for soft commutation in conduction and switching losses. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

Features

AQG 324 qualified
High-speed switching series
Maximum junction temperature: T_J = +175°C
Low V_CE(sat) = 1.7 V (typ.) at I_C = 80 A
Minimized tail current

Tight parameter distribution
Low thermal resistance thanks to DBC substrate
Positive temperature V_CE(sat) coefficient
Soft and very fast recovery antiparallel diode
Isolation rating of 3.4 kV_RMS/min