Transistor - IGBT - Singoli

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Codice produttore	Prezzo	Magazzino	Fornitore	Produttore	Qtà min	Codice DK	Serie	Contenitore	Stato componente	Tipo di IGBT	Tensione - Rottura collettore-emettitore (max)	Corrente - Collettore (Ic) max	Corrente - Pulsata collettore (Icm)	Vce(on) max a Vge, Ic	Potenza - Max	Energia di commutazione	Tipo di ingresso	Carica del gate	Td (on/off) a 25°C	Condizione di test	Tempo di recupero inverso (Trr)	Temperatura di funzionamento	Tipo di montaggio	Contenitore/involucro	Contenitore del fornitore

HGTD1N120BNS9A IGBT 1200V 5.3A 60W TO252AA	€ 1,49000	13.308 - Immediate	onsemi	onsemi	1	HGTD1N120BNS9ATR-ND HGTD1N120BNS9ACT-ND HGTD1N120BNS9ADKR-ND	-	Nastrato in bobina (TR) Nastro pre-tagliato (CT) Digi-Reel®	Attivo	NPT	1200 V	5.3 A	6 A	2,9V a 15V, 1A	60 W	70µJ (on), 90µJ (off)	Standard	14 nC	15ns/67ns	960V, 1A, 82Ohm, 15V	-	-55°C ~ 150°C (TJ)	A montaggio superficiale	TO-252-3, DPak (2 conduttori+ linguetta), SC-63	TO-252AA
STGP7NC60HD IGBT 600V 25A 80W TO220	€ 1,53000	0 - Immediate	STMicroelectronics	STMicroelectronics	1	497-6735-5-ND	PowerMESH™	Tubo	Attivo	-	600 V	25 A	50 A	2,5V a 15V, 7A	80 W	95µJ (on), 115µJ (off)	Standard	35 nC	18,5ns/72ns	390V, 7A, 10Ohm, 15V	37 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-220-3	TO-220
ISL9V5045S3ST IGBT 480V 51A TO263AB	€ 3,25000	0 - Immediate	onsemi	onsemi	1	ISL9V5045S3STTR-ND ISL9V5045S3STCT-ND ISL9V5045S3STDKR-ND	EcoSPARK®	Nastrato in bobina (TR) Nastro pre-tagliato (CT) Digi-Reel®	Attivo	-	480 V	51 A	-	1,6V a 4V, 10A	300 W	-	Logici	32 nC	-/10,8µs	300V, 1kohm, 5V	-	-40°C ~ 175°C (TJ)	A montaggio superficiale	TO-263-3, D²Pak (2 conduttori + linguetta), TO-263AB	D²PAK (TO-263)
FGH60N60UFDTU IGBT 600V 120A 298W TO247	€ 5,94000	727 - Immediate	onsemi	onsemi	1	FGH60N60UFDTU-ND	-	Tubo	Attivo	Field stop	600 V	120 A	180 A	2,4V a 15V, 60A	298 W	1,81mJ (on), 810µJ (off)	Standard	188 nC	23ns/130ns	400V, 60A, 5Ohm, 15V	47 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-247-3	TO-247-3
IGW40N120H3FKSA1 IGBT 1200V 80A 483W TO247-3	€ 6,53000	286 - Immediate	Infineon Technologies	Infineon Technologies	1	IGW40N120H3FKSA1-ND	TrenchStop®	Tubo	Attivo	Trench Field Stop	1200 V	80 A	160 A	2,4V a 15V, 40A	483 W	3,16 mJ	Standard	185 nC	30ns/290ns	600V, 40A, 12Ohm, 15V	-	-40°C ~ 175°C (TJ)	Foro passante	TO-247-3	PG-TO247-3-1
IGW60T120FKSA1 IGBT TRENCH 1200V 100A TO247-3	€ 6,66000	1.430 - Immediate	Infineon Technologies	Infineon Technologies	1	IGW60T120FKSA1-ND	TrenchStop®	Tubo	Attivo	Trench Field Stop	1200 V	100 A	150 A	2,4V a 15V, 60A	375 W	9,5 mJ	Standard	280 nC	50ns/480ns	600V, 60A, 10Ohm, 15V	-	-40°C ~ 150°C (TJ)	Foro passante	TO-247-3	PG-TO247-3-1
IXXH80N65B4 IGBT 650V 160A 625W TO247AD	€ 7,00000	1.248 - Immediate	IXYS	IXYS	1	IXXH80N65B4-ND	GenX4™, XPT™	Tubo	Attivo	PT	650 V	160 A	430 A	2V a 15V, 80A	625 W	3,77mJ (on), 1,2mJ (off)	Standard	120 nC	38ns/120ns	400V, 80A, 3Ohm, 15V	-	-55°C ~ 175°C (TJ)	Foro passante	TO-247-3	TO-247 (IXXH)
APT75GN60LDQ3G IGBT 600V 155A 536W TO264	€ 8,01000	0 - Immediate	Microchip Technology	Microchip Technology	1	APT75GN60LDQ3G-ND	-	Tubo	Attivo	Trench Field Stop	600 V	155 A	225 A	1,85V a 15V, 75A	536 W	2500µJ (on), 2140µJ (off)	Standard	485 nC	47ns/385ns	400V, 75A, 1Ohm, 15V	-	-55°C ~ 175°C (TJ)	Foro passante	TO-264-3, TO-264AA	TO-264 [L]
APT50GS60BRDQ2G IGBT 600V 93A 415W TO247	€ 10,58000	4.128 - Immediate	Microchip Technology	Microchip Technology	1	APT50GS60BRDQ2G-ND	Thunderbolt IGBT®	Tubo	Attivo	NPT	600 V	93 A	195 A	3,15V a 15V, 50A	415 W	755µJ (off)	Standard	235 nC	16ns/225ns	400V, 40A, 4,7Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-247-3	TO-247 [B]
IXGT16N170A IGBT 1700V 16A 190W TO268	€ 11,18000	307 - Immediate	IXYS	IXYS	1	IXGT16N170A-ND	-	Tubo	Attivo	NPT	1700 V	16 A	40 A	5V a 15V, 11A	190 W	900µJ (off)	Standard	65 nC	36ns/160ns	850V, 16A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	A montaggio superficiale	TO-268-3, D³Pak (2 conduttori + linguetta), TO-268AA	TO-268AA
IXXX200N65B4 IGBT 650V 370A 1150W PLUS247	€ 19,22000	1.033 - Immediate	IXYS	IXYS	1	IXXX200N65B4-ND	GenX4™, XPT™	Tubo	Attivo	PT	650 V	370 A	1000 A	1,7V a 15V, 160A	1150 W	4,4mJ (on), 2,2mJ (off)	Standard	553 nC	62ns/245ns	400V, 100A, 1Ohm, 15V	-	-55°C ~ 175°C (TJ)	Foro passante	TO-247-3	PLUS247™-3
IXBH42N170 IGBT 1700V 80A 360W TO247	€ 22,54000	252 - Immediate	IXYS	IXYS	1	IXBH42N170-ND	BIMOSFET™	Sfuso	Attivo	-	1700 V	80 A	300 A	2,8V a 15V, 42A	360 W	-	Standard	188 nC	-	-	1.32 µs	-55°C ~ 150°C (TJ)	Foro passante	TO-247-3	TO-247AD
IXBT12N300HV IGBT 3000V 30A 160W TO268	€ 31,23000	357 - Immediate 1.020 - Factory	IXYS	IXYS	1	IXBT12N300HV-ND	BIMOSFET™	Tubo	Attivo	-	3000 V	30 A	100 A	3,2V a 15V, 12A	160 W	-	Standard	62 nC	64ns/180ns	1250V, 12A, 10Ohm, 15V	1.4 µs	-55°C ~ 150°C (TJ)	A montaggio superficiale	TO-268-3, D³Pak (2 conduttori + linguetta), TO-268AA	TO-268
IXBH42N250 BIMOSFET TRANS 2500V 42A TO-247A	€ 31,23000	223 - Immediate 2.430 - Factory	IXYS	IXYS	1	238-IXBH42N250-ND	BIMOSFET™	Tubo	Attivo	-	2500 V	104 A	400 A	3V a 15V, 42A	500 W	-	Standard	200 nC	72ns/445ns	1250V, 42A, 20Ohm, 15V	1.7 µs	-55°C ~ 150°C (TJ)	Foro passante	TO-247-3	TO-247AD
IXYH30N450HV IGBT 4500V 30A TO-247HV	€ 35,86000	358 - Immediate 180 - Factory	IXYS	IXYS	1	IXYH30N450HV-ND	XPT™	Tubo	Attivo	PT	4500 V	60 A	200 A	3,9V a 15V, 30A	430 W	-	Standard	88 nC	-	960V, 30A, 10Ohm, 15V	-	-55°C ~ 150°C (TJ)	Foro passante	Variante TO-247-3	TO-247HV
IXBK75N170 IGBT 1700V 200A 1040W TO264	€ 50,40000	474 - Immediate 525 - Factory	IXYS	IXYS	1	IXBK75N170-ND	BIMOSFET™	Tubo	Attivo	-	1700 V	200 A	580 A	3,1V a 15V, 75A	1040 W	-	Standard	350 nC	-	-	1.5 µs	-55°C ~ 150°C (TJ)	Foro passante	TO-264-3, TO-264AA	TO-264AA
IXYX40N450HV IGBT	€ 53,97000	270 - Immediate	IXYS	IXYS	1	IXYX40N450HV-ND	XPT™	Tubo	Attivo	-	4500 V	95 A	350 A	3,9V a 15V, 40A	660 W	-	Standard	170 nC	36ns/110ns	960V, 40A, 2Ohm, 15V	-	-55°C ~ 150°C (TJ)	Foro passante	Variante TO-247-3	TO-247PLUS-HV
IXBK55N300 IGBT 3000V 130A 625W TO264	€ 83,03000	490 - Immediate	IXYS	IXYS	1	IXBK55N300-ND	BIMOSFET™	Tubo	Attivo	-	3000 V	130 A	600 A	3,2V a 15V, 55A	625 W	-	Standard	335 nC	-	-	1.9 µs	-55°C ~ 150°C (TJ)	Foro passante	TO-264-3, TO-264AA	TO-264AA
IXGK75N250 IGBT 2500V 170A 780W TO264	€ 90,45000	73 - Immediate	IXYS	IXYS	1	IXGK75N250-ND	-	Tubo	Attivo	NPT	2500 V	170 A	530 A	3,6V a 15V, 150A	780 W	-	Standard	410 nC	-	-	-	-55°C ~ 150°C (TJ)	Foro passante	TO-264-3, TO-264AA	TO-264 (IXGK)
IXBH20N360HV IGBT 3600V 70A TO-247HV	€ 104,22000	550 - Immediate 1.140 - Factory	IXYS	IXYS	1	IXBH20N360HV-ND	BIMOSFET™	Tubo	Attivo	-	3600 V	70 A	220 A	3,4V a 15V, 20A	430 W	15,5mJ (on), 4,3mJ (off)	Standard	110 nC	18ns/238ns	1500V, 20A, 10Ohm, 15V	1.7 µs	-55°C ~ 150°C (TJ)	Foro passante	Variante TO-247-3	TO-247HV
STGF10NC60KD IGBT 600V 9A 25W TO220FP	€ 1,54000	8.428 - Immediate	STMicroelectronics	STMicroelectronics	1	497-5114-5-ND	PowerMESH™	Tubo	Attivo	-	600 V	9 A	30 A	2,5V a 15V, 5A	25 W	55µJ (on), 85µJ (off)	Standard	19 nC	17ns/72ns	390V, 5A, 10Ohm, 15V	22 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-220-3 Full Pack	TO-220FP
STGF3NC120HD IGBT 1200V 6A 25W TO220FP	€ 1,76000	3.665 - Immediate	STMicroelectronics	STMicroelectronics	1	497-4353-5-ND	PowerMESH™	Tubo	Attivo	-	1200 V	6 A	20 A	2,8V a 15V, 3A	25 W	236µJ (on), 290µJ (off)	Standard	24 nC	15ns/118ns	800V, 3A, 10Ohm, 15V	51 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-220-3 Full Pack	TO-220FP
STGP3NC120HD IGBT 1200V 14A 75W TO220	€ 1,76000	2.655 - Immediate	STMicroelectronics	STMicroelectronics	1	497-15806-5-ND	PowerMESH™	Tubo	Attivo	-	1200 V	14 A	20 A	2,8V a 15V, 3A	75 W	236µJ (on), 290µJ (off)	Standard	24 nC	15ns/118ns	800V, 3A, 10Ohm, 15V	51 ns	-55°C ~ 150°C (TJ)	Foro passante	TO-220-3	TO-220
RGT30NS65DGC9 IGBT	€ 2,39000	2.939 - Immediate	Rohm Semiconductor	Rohm Semiconductor	1	RGT30NS65DGC9-ND	-	Tubo	Attivo	Trench Field Stop	650 V	30 A	45 A	2,1V a 15V, 15A	133 W	-	Standard	32 nC	18ns/64ns	400V, 15A, 10Ohm, 15V	55 ns	-40°C ~ 175°C (TJ)	Foro passante	TO-262-3, conduttori lunghi, I²Pak, TO-262AA	TO-262
FGP3040G2-F085 IGBT 400V 41A TO220-3	€ 2,70000	648 - Immediate	onsemi	onsemi	1	FGP3040G2-F085OS-ND	Automotive, AEC-Q101, EcoSPARK®	Tubo	Attivo	-	400 V	41 A	-	1,25V a 4V, 6A	150 W	-	Logici	21 nC	900ns/4,8µs	-	-	-55°C ~ 175°C (TJ)	Foro passante	TO-220-3	TO-220-3

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