Settings
Fast Delivery
Free Shipping
Incoterms
Payment Types
Marketplace Product
MLX91221 Datasheet
MLX91221 Integrated Current Sensor IC
Datasheet
Features and Benefits
Factory trimmed AC and DC current sensor
Analog ratiometric or fixed output voltage
Combining sensing element, signal
conditioning & isolation in SOIC package
No application programming required
High speed sensing
DC to 300kHz bandwidth
2µs response time
Robust against external magnetic fields
No magnetic hysteresis
Double overcurrent detection (SOIC-16)
Low ohmic losses of integrated conductor
0.9mΩ SOIC-8 / 0.75mΩ SOIC-16
SOIC-8 narrow body and SOIC-16 wide
body package, RoHS compliant
Lead free component, suitable for lead
free soldering profile up to 260°C, MSL3
Rated voltage isolation
2.4kVRMS for SOIC-8
4.8kVRMS for SOIC-16
SOIC-8
SOIC-16
IEC/UL 62368-1:2014
(2nd edition)
Applications
AC and DC Chargers
Electric Drives
DCDC converters
Solar
Power Supplies
Demand/Load control
Description
The MLX91221 is an Integrated Current Sensor that
senses the current flowing through the low
impedant leadframe of the SOIC package. By virtue
of fixing the current conductor position with
respect to the monolithic CMOS sensor, a fully
integrated Hall-effect current sensor is obtained,
that is factory calibrated.
Inside the package, the magnetic flux density
generated by the current flow is sensed
differentially by two sets of Hall plates. As a result
the influence of external disturbing fields is
minimized in the fast analog front-end. The
residual signal is amplified to provide a high-speed
linear analog output voltage.
The close proximity of the Hall plates to the current
conductor ensures a high signal-to-noise ratio and
an accurate signal over temperature. With this
miniaturization, high voltage isolation ratings are
still maintained between the primary and their
opposing secondary side leads of the package.
Meleii§"""
MLX91221 Integrated Current Sensor IC
Datasheet
Page 2 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
Contents
Features and Benefits ................................................................................................................................ 1
Applications ............................................................................................................................................... 1
Description ................................................................................................................................................ 1
Contents .................................................................................................................................................... 2
1. Ordering Information ............................................................................................................................ 4
2. Functional Diagram ............................................................................................................................... 6
3. Glossary of Terms .................................................................................................................................. 8
4. Pinout .................................................................................................................................................... 9
5. Absolute Maximum Ratings ................................................................................................................. 11
6. MLX91221 General Electrical Specification .......................................................................................... 12
7. MLX91221 General Current Specification ............................................................................................ 13
8. MLX91221 Voltage Isolation Specification ........................................................................................... 14
9. MLX91221 Timing Specification ........................................................................................................... 15
10. MLX91221 Accuracy Specification ..................................................................................................... 16
10.1. Definitions ....................................................................................................................................... 16
10.2. MLX91221KDx-ABF-010 Specifications .......................................................................................... 18
10.3. MLX91221KDx-ABR-020 Specifications ......................................................................................... 19
10.4. MLX91221KDx-ABF-020 Specifications .......................................................................................... 20
10.5. MLX91221KDx-ABF-120 Specifications .......................................................................................... 21
10.6. MLX91221KDx-ABF-025 Specifications .......................................................................................... 22
10.7. MLX91221KDx-ABR-038 Specifications ......................................................................................... 23
10.8. MLX91221KDx-ABF-050 Specifications .......................................................................................... 24
10.9. MLX91221KDx-ABR-050 Specifications ......................................................................................... 25
10.10. MLX91221KDx-ABF-075 Specifications ....................................................................................... 26
11. MLX91221 Overcurrent Detection ..................................................................................................... 27
11.1. General ............................................................................................................................................ 27
11.2. Electrical Specifications .................................................................................................................. 28
11.3. Internal Overcurrent Detection Principle ...................................................................................... 28
11.4. External Overcurrent Detection Principle ..................................................................................... 29
12. Recommended Application Diagrams ................................................................................................ 30
Meleii§"""
MLX91221 Integrated Current Sensor IC
Datasheet
Page 3 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
12.1. Resistor and Capacitor Values ........................................................................................................ 30
12.2. SOIC8 Application Diagram ............................................................................................................ 30
12.3. SOIC16 Application Diagram .......................................................................................................... 31
13. Standard information regarding manufacturability with different soldering processes ..................... 32
14. ESD Precautions ................................................................................................................................. 33
15. Package Information .......................................................................................................................... 34
15.1. SOIC-8 150mils - Package Dimensions ........................................................................................... 34
15.2. SOIC-16 300mils - Package Dimensions ......................................................................................... 35
16. Disclaimer .......................................................................................................................................... 36
Meleii?"
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 4 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
1. Ordering Information
Product Code
Package
Current
Measurement
Range
Output Type
Sensitivity
OCD
level
MLX91221KDC-ABR-020-RE
SOIC8
20 A
Ratiometric
62.5 mV/A
20.1
MLX91221KDC-ABF-025-RE
SOIC8
25 A
Fixed
50 mV/A
25.1
MLX91221KDC-ABR-038-RE
SOIC8
38 A
Ratiometric
33.3 mV/A
42.8
MLX91221KDC-ABF-050-RE
SOIC8
50 A
Fixed
25 mV/A
57.0
MLX91221KDC-ABR-050-RE
SOIC8
50 A
Ratiometric
25 mV/A
57.0
MLX91221KDF-ABF-010-RE
SOIC16
10 A
Fixed
120 mV/A
10.0
MLX91221KDF-ABF-020-RE
SOIC16
20 A
Fixed
62.5 mV/A
20.1
MLX91221KDF-ABR-020-RE
SOIC16
20 A
Ratiometric
62.5 mV/A
20.1
MLX91221KDF-ABF-120-RE
SOIC16
20 A
Fixed
62.5 mV/A
28.0
MLX91221KDF-ABF-025-RE
SOIC16
25 A
Fixed
50 mV/A
25.1
MLX91221KDF-ABR-050-RE
SOIC16
50 A
Ratiometric
25
57.0
MLX91221KDF-ABF-050-RE
SOIC16
50 A
Fixed
25 mV/A
57.0
MLX91221KDF-ABF-075-RE
SOIC16
75 A
Fixed
16.67 mV/A
85.6
Legend:
Temperature Code:
K: from -40°C to 125°C ambient temperature
Package Code:
“DC” for SOIC-8 NB (Narrow Body – 150mils) package
“DF” for SOIC-16 WB (Wide Body – 300mils) package
Option Code:
Axx-xxx: die version
xBx-xxx: “B” for bipolar(1) and “U” for unipolar
xxF-xxx: “F” for fixed mode output and “R” for ratiometric output
xxx-0xx: “0” for default trimming
xxx-x50: “50” for Full Scale current measurement (corresponding to 1.25V excursion
from VOQ in bipolar case)
Packing Form:
“RE” for Reel
Meleii§"""
Melexis website
MLX91221 Integrated Current Sensor IC
Datasheet
Page 5 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
Ordering Example:
MLX91221KDC-ABF-050-RE
Table 1 – Legend
(1) Bipolar output indicates that the sensor provides a symmetrical output around the 0A point which is set at half the output
voltage (50% VDD) in case of ratiometric mode, and VREF equals 50%VDD in case of fixed mode. Both designs imply sensing
of positive and negative currents.
Melexis is continuously expanding its product portfolio by adding new option codes to better meet the needs
of our customer’s applications. This table is being updated frequently, please go to the Melexis website to
download the latest version of this datasheet. For custom transfer characteristics, please contact your local
Melexis Sales representative or distributor.
Vnn
Regulamr Relerence Vm
Vow
Chowmg De Onwmfl
DCD7EXT OCDiEXT
voc EXT
0CDJNT 0:1),le
GND
I I .SOIC16 only .smcs&smc16
n
m I m I mun
I I
v m l
I I
I I
I I
I (( I Ilia
MLX91221 : our : ADC
I I
I I
I I
I I
Meleiis
MLX91221 Integrated Current Sensor IC
Datasheet
Page 6 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
2. Functional Diagram
Figure 1: Functional Diagram for MLX91221
The sensor can be used in 2 different modes, depending on the application. Both modes rely on the output voltage
of the sensor being proportional to the flow of current, but the difference resides in the signal reconstruction.
Ratiometric Mode
No matter if the VDD line is at 3.3V or deviating +/-5%, the ADC code for a given measured current will always be
the same as the ADC is supplied by the same voltage as the sensor. The sensor has a sensitivity expressed in %VDD/A.
usmr) rxcwrnw:
Meleii?"
noon
m
l
MLX91221
I
_¢.,_
MLX91221 Integrated Current Sensor IC
Datasheet
Page 7 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
Differential or Fixed Mode(1)
In this particular case the ADC does not necessarily share the same supply voltage with the sensor. For this reason,
the sensor is calibrated with an absolute sensitivity regardless of the actual supply voltage. The output signal can
be reconstructed by taking the difference between the output and the reference voltage from the IC. The ADC gets
these two signals as inputs for establishing the sensed current accurately, and is not influenced by the supply
voltage differences between both sensor and microcontroller, if applicable.
Parameter
Ratiometric Mode
Differential or Fixed Mode
Output Signal
VOUT [%VDD]
Example: output is 1.65V when supply is
3.3 V output is then 50%VDD. If the
supply (VDD) increases with 5% to 3.465
V the sensor output will (for the same
measured input current) scale
ratiometrically with the supply voltage,
becoming 1.733 V which is a different
voltage than when the supply was 3.3 V,
but as a percentage (i.e. ratiometrically
seen) it remains at the same level of
50% of VDD.
VOUT-VREF [V]
Example: output is 1.651 and VREF is
1.651V when supply is 3.3 V. When the
supply voltage is increasing to 3.4 V
due to supply system variation over
temperature, the sensor will still
maintain the same “fixed” output
values VOUT and VREF.
Offset
VOUT[0A] = 50 [%VDD] (programmable)
VREF = 1.65 [V] (Melexis programmable)
VOUT[0A]-VREF = 0 [V]
Offset ratiometric
Yes
No
Sensitivity
[%VDD/A]
[mV/A]
Sensitivity ratiometric
Yes
No
Measured Current
(VOUT-VOUT[0A]) / Sensitivity
(VOUT-VREF) / Sensitivity
(1) More information can be found in Application Note AN91220_ReferencePin on www.melexis.com
Meleiié1""
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 8 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
3. Glossary of Terms
Gauss (G), Tesla (T)
Units for the magnetic flux density - 1 mT = 10 G
TC
Temperature Coefficient (in ppm/°C)
NC
Not Connected
IP
Integrated Primary
ASP
Analog Signal Processing
DSP
Digital Signal Processing
AC
Alternate Current
DC
Direct Current
RAM
Random Access Memory
EMC
Electro-Magnetic Compatibility
FS
Full Scale
OCD
OverCurrent Detection
Table 2 – Glossary of Terms
|P+
|P+
IP+
|P+
IP-
IF
IF-
MUGIZD
OCDil NT
V0C7EXT
VDD
DCDJEXT
vour
NC
VRE
Vfi
Meleiis
wsmm [Ncwttwwa
IP+
IP+
VDD
VOUT
VRE
V$
MDEIHI
MLX91221 Integrated Current Sensor IC
Datasheet
Page 9 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
4. Pinout
PIN
SOIC-8
SOIC-16
Pin
Function
Pin
Function
1
IP+
Primary Current
Path Input
IP+
Primary Current Path
Input
2
3
IP-
Primary Current
Path Output
4
5
VSS
Ground Voltage
IP-
Primary Current Path
Output
6
VREF
Reference Voltage
7
VOUT
Output Voltage
8
VDD
Supply Voltage
9
VSS
Ground Voltage
10
VREF
Reference Voltage
11
NC
Not connected
12
VOUT
Output Voltage
13
OCDEXT
External Overcurrent
detection
14
VDD
Supply Voltage
Figure 2: SOIC-16 and SOIC-8 pinouts
MeleXis
wsww [Newttkwc
MLX91221 Integrated Current Sensor IC
Datasheet
Page 10 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
PIN
SOIC-8
SOIC-16
Pin
Function
Pin
Function
15
VOCEXT
External Overcurrent
threshold voltage
16
OCDINT
Internal Overcurrent
Detection
For optimal EMC behavior, it is recommended to connect the unused pin (NC) to the Ground.
Meleii?"
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 11 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
5. Absolute Maximum Ratings
Parameter
Value
Positive Supply Voltage (overvoltage)
+ 8 V
Positive Supply Voltage (maintaining application
mode)
+ 6.5 V
Reverse Supply Voltage
- 0.3 V
Positive Pin Voltage(1)
VDD + 0.3 V
Output Sourcing Current
+ 25 mA
Reverse Pin Voltage(1)
- 0.3 V
Output Sinking Current
+50 mA
Operating Ambient Temperature Range, TA
- 40°C to + 125°C
Storage Temperature Range, TS
- 40°C to + 150°C
Maximum Junction Temperature, TJ(2)
+ 165°C
(1) Except for VDD and VSS
(2) For more information on how the junction temperature relates to the applied current and ambient temperature range, please
refer to section 7
MLX91221 Integrated Current Sensor IC
Datasheet
Page 12 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
6. MLX91221 General Electrical Specification
DC Operating Parameters at VDD = 3.3 V (unless otherwise specified) and for TA as specified by the Temperature
suffix (K).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Nominal Supply Voltage
VDD
3.135
3.3
3.465
V
Supply Current
IDD
Without RLOAD, in application
mode
20
26
mA
output resistance
ROUT
VOUT = 50%VDD, ILOAD = 10 mA
1
5
Voltage Reference Output
Resistance
RREF
VREF = 50%VDD, ISINK = 5 mA or
Isource = 0.2 mA
120
200
333
Output Capacitive Load
CLOAD
Output amplifier stability is
optimized for this typical value
0
4.7
6
nF
Common Mode Field
Sensitivity(1)
CMFS
For SOIC16
0.4
mA/G
For SOIC8
0.4
mA/G
Output Short Circuit Current
ISHORT
Output shorted to VDD or VSS -
Permanent
180
mA
Output Leakage current
ILEAK
High impedance mode,
TA=125°C
TJ < 150°C
2
20
µA
Output Voltage Linear Swing
VOUT_LSW
VDD > 4.6 V for Fixed Mode
versions
10
90
%VDD
(1) Common Mode Field Sensitivity expresses the sensor's susceptibility to a homogenously applied field perpendicular to the
package surface. The differential measurement cancels out such common mode magnetic fields, but due to the matching
between both Hall plate clusters flanking the current conductor, this is not perfect. This parameter exp resses the mA
output error as a result of such 1 mT applied field. It has to be noted, that magnetic fields generated by nearby
conductors are not homogenous but introduce gradients. More information in this regard can be found in Application
Note AN91220_ExternalFieldImmunity on www.melexis.com
MLX91221 Integrated Current Sensor IC
Datasheet
Page 13 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
7. MLX91221 General Current Specification
DC Operating Parameters at VDD = 3.3V (unless otherwise specified) and for TA as specified by the Temperature
suffix (K).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Electrical Resistance of the
Primary Current Path
RIP_SOIC8
RIP_SOIC16
TA=25°C
0.9
0.75
mΩ
mΩ
Measurement Range
IPMAX
Option Code ABx-x10
Option Code ABx-x20
Option Code ABx-x25
Option Code ABx-x38
Option Code ABx-x50
Option Code ABx-x75
10
20
25
38
50
75
A
A
A
A
A
A
Nominal Current
IPNOM
Option Code ABx-x10
Option Code ABx-x20
Option Code ABx-x25
Option Code ABx-x38
Option Code ABx-x50
Option Code ABx-x75
4
8
10
15
20
30
A
A
A
A
A
A
Linearity Error
NL
Current in range IPNOM, TA=25°C
±0.3
%FS
NL
Current in range IPMAX, TA=25°C
±0.6
%FS
Current Capability(1)
IPC85_SOIC8
IPC25_SOIC8
Continuous, TA=-40 to 85°C
Continuous, TA=25°C
±25
±40
A
A
IPC85_SOIC16
IPC25_SOIC16
Continuous, TA=-40 to 85°C
Continuous, TA=25°C
±30
±45
A
A
(1) Current capability based on the reference Melexis PCB made of 2x 105 µm copper layer without any forced air or other form of
cooling. Continuous or RMS current ranges in application are typically higher than this. More information can be found in
Application Notes AN91220_FuseCurrent Capability and AN91220_ThermalManagement on www.melexis.com.
MLX91221 Integrated Current Sensor IC
Datasheet
Page 14 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
8. MLX91221 Voltage Isolation Specification
Parameter
Symbol
Test Conditions
Rating
Units
Dielectric Strength Test Voltage (2) (3)
VISO_SOIC8
IEC 62368-1:2014 (second
edition)
2400
VRMS
VISO_SOIC16
4800
Clearance (primary to secondary)
Shortest distance through air.
SOIC8 package.
4
mm
Creepage distance (primary to
secondary)
Shortest path along body. SOIC8
package.
3.6
mm
Clearance (primary to secondary)
Shortest distance through air.
SOIC16 package.
8.1
mm
Creepage distance (primary to
secondary)
Shortest path along body.
SOIC16 package.
7.1
mm
Comparative tracking index
CTI
600
Working Voltage for Basic Isolation(4)
VWV_SOIC8
IEC 62368-1:2014 (second
edition)
Based on Pollution degree 2,
material group II
500
VRMS
707
VDC
VWV_SOIC16
1000
VRMS
1414
VDC
(2) Agency type tested, measured between IP (pin 1-4 on SOIC8, pin 1-8 on SOIC16) and Secondary side (pin 5-8 on SOIC8, pin
9-16 on SOIC16).
(3) Melexis performs routine production-line tests, for all SOIC8 & SOIC16 devices produced.
(4) Tension de service pour une isolation principale spécifiée pour un Degré de Pollution 2 et un groupe de matériau II selon
la norme IEC-62368-1 :2014 (2ème édition)
Meleiis "
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 15 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
9. MLX91221 Timing Specification
DC Operating Parameters at VDD = 3.3V (unless otherwise specified) and for TA as specified by the Temperature
suffix (K).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Step Response Time
TRESP
Delay between the input signal
reaching 90% and the output
reaching 90% (see Figure 3)
2
μs
Bandwidth
BW
-3dB, TA =25°C
300
kHz
Power on Delay(5)
TPOD
VREF capacitor = 47nF
0.6
ms
1 µs
in, Vout
time
90%100% Response
time
Figure 3: Response Time definition
(5) During the Power-on delay, the output will remain within the 10% fault band at all time.
DDnom
VVVVV
VVVVV
Meleiié"""
MLX91221 Integrated Current Sensor IC
Datasheet
Page 16 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10. MLX91221 Accuracy Specification
10.1. Definitions
Thermal Reference Drift
The thermal reference drift is the variation of the reference voltage (VREF) in temperature. It is expressed in
ppm/°C.
Voltage Output Quiescent
VOQ corresponds to the output when no current is flowing through the MLX91221 at TA=25°C.
Ratiometry Offset and Sensitivity Error
In Ratiometric mode, VOUT and VREF are scaled with the supply voltage.
Ratiometric VOQ Error:
Ratiometric Sensitivity Error:
[%]
In Fixed mode, VOUT and VREF are not scaled with the supply voltage. Ideally, they do not vary.
Non-Ratiometric VOQ Error:
Non-Ratiometric Sensitivity Error:
Meleii§"""
MLX91221 Integrated Current Sensor IC
Datasheet
Page 17 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
Thermal Offset Drift
ΔTVOQ corresponds to variation of VOQ in temperature.
Sensitivity
The sensitivity is the ratio between the output of the MLX91221 and the input current.
For ratiometric devices, as the output will scale with the supply, sensitivity is expressed as [%VDD]/A.
For fixed devices, the output does not vary with the VDD, sensitivity is thus expressed as mV/A.
Linearity Error
The linearity error is the deviation of the output from the expected linear behaviour. To obtain the linearity
error, the current is swept from - to To decorrelate the thermal drift from the linearity error, the
junction temperature should be fixed below 50°C.
MLX91221 Integrated Current Sensor IC
Datasheet
Page 18 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.2. MLX91221KDx-ABF-010 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-10
10
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-62.5
7.5
62.5
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±41.7
±10
±83.4
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
118.8
120
1
121.2
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
178
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
115
mARMS
OCDINT Threshold Current(7)
IOCD
10
A
OCDINT Accuracy(7)
εIOCD
TA=25°C
TA=-40°C to 85°C
9.7
17.6
%
%
OCDEXT threshold error(7)
εEOCD
-6
6
%
(7) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 19 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.3. MLX91221KDx-ABR-020 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-20
20
A
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT –VDD/2, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-120
7.5
120
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-7.5
7.5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±80
±7.5
±120
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
61.8
62.5
1
63.2
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
±0.3
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
206
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
136
mARMS
OCDINT Threshold Current(8)
IOCD
20.1
A
OCDINT Accuracy(8)
εIOCD
TA=25°C
TA=-40°C to 85°C
6
11
%
%
OCDEXT threshold error(8)
εEOCD
-6
6
%
(8) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 20 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.4. MLX91221KDx-ABF-020 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-20
20
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-120
7.5
120
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±80
±7.5
±120
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
61.8
62.5
1
63.2
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
206
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
136
mARMS
OCDINT Threshold Current(9)
IOCD
20.1
A
OCDINT Accuracy(9)
εIOCD
TA=25°C
TA=-40°C to 85°C
6
11
%
%
OCDEXT threshold error(9)(7)
εEOCD
-6
6
%
(9) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 21 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.5. MLX91221KDx-ABF-120 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-20
20
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-120
7.5
120
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±80
±7.5
±120
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
61.8
62.5
1
63.2
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
206
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
136
mARMS
OCDINT Threshold
Current(10)
IOCD
28
A
OCDINT Accuracy(10)
εIOCD
TA=25°C
TA=-40°C to 85°C
6
11
%
%
OCDEXT threshold error(10)
εEOCD
-6
6
%
(10) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 22 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.6. MLX91221KDx-ABF-025 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-25
25
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-150
7.5
150
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±100
±7.5
±150
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
49.5
50
1
50.5
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
202
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
136
mARMS
OCDINT Threshold
Current(11)
IOCD
25.1
A
OCDINT Accuracy(11)
εIOCD
TA=25°C
TA=-40°C to 85°C
5.5
10.2
%
%
OCDEXT threshold error(11)
εEOCD
-6
6
%
(11) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 23 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.7. MLX91221KDx-ABR-038 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-38
38
A
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT –VDD/2, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-225
7.5
225
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-7.5
7.5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±150
±7.5
±225
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
33.0
33.3
1
33.6
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
±0.3
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
207
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
140
mARMS
OCDINT Threshold
Current(12)
IOCD
42.8
A
OCDINT Accuracy(12)
εIOCD
TA=25°C
TA=-40°C to 85°C
5
10
%
%
OCDEXT threshold error(12)
εEOCD
-6
6
%
(12) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 24 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.8. MLX91221KDx-ABF-050 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-50
50
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-300
7.5
300
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±200
±7.5
±300
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
24.75
25
1
25.25
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
210
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
143
mARMS
OCDINT Threshold
Current(13)
IOCD
57
A
OCDINT Accuracy(13)
εIOCD
TA=25°C
TA=-40°C to 85°C
4
6
%
%
OCDEXT threshold error(13)
εEOCD
-6
6
%
(13) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 25 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.9. MLX91221KDx-ABR-050 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-50
50
A
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT –VDD/2, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-300
7.5
300
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-7.5
7.5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±200
±7.5
±300
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
24.75
25.0
1
25.25
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
±0.3
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
210
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
143
mARMS
OCDINT Threshold
Current(14)
IOCD
57
A
OCDINT Accuracy(14)
εIOCD
TA=25°C
TA=-40°C to 85°C
4
6
%
%
OCDEXT threshold error(14)
εEOCD
-6
6
%
(14) For SOIC16 version
MLX91221 Integrated Current Sensor IC
Datasheet
Page 26 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
10.10. MLX91221KDx-ABF-075 Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified),for TA as specified by the Temperature
suffix (K) and for Tj < 150 °C.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Primary current
IPM
-75
75
A
Voltage Reference
VREF
TA=25°C
1.63
1.65
1.67
V
Thermal Reference Drift
ΔTVREF
Variation versus 25°C
±150
ppm/°C
Voltage Output Quiescent
VOQ
No current flowing through
IP, VOUT-VREF, TA=25°C
No resistive load on VOUT and
VREF
-7.5
-450
7.5
450
mV
mA
Ratiometry Offset Error
ΔRVOQ
TA=25°C and for ±5% VDD
-5
5
mV
Thermal Offset Drift
ΔTVOQ
Referred to TA=25°C, IP = 0A
±5
±300
±7.5
±450
mV
mA
Lifetime Offset Drift
ΔLVOQ
±2
mV
Sensitivity
S
At TA=25°C
For Tj < 50 °C
-1
16.5
16.67
1
16.8
%
mV/A
Ratiometry Sensitivity Error
ΔRS
TA=25°C and for ±5% VDD
-0.6
0.6
%
Thermal Sensitivity Drift
ΔTS
Current range IPMAX
±1
±1.5
%S
Sensitivity Drift over lifetime
ΔLS
±1
±2
%S
Output Noise Spectral
Density
NSD
IP = 0 A, TA=25°C
within BW = 1 … 100kHz
221
µA/√Hz
Output RMS Noise
NRMS
IP = 0 A, TA=25°C
BW = 300kHz
149
mARMS
OCDINT Threshold
Current(15)
IOCD
85.6
A
OCDINT Accuracy(15)(13)
εIOCD
TA=25°C
TA=-40°C to 85°C
4
6
%
%
OCDEXT threshold error(15)
εEOCD
-6
6
%
(15) For SOIC16 version
Meleiis "
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 27 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
11. MLX91221 Overcurrent Detection
1
11.1. General
The MLX91221 provides two OCD features that allow detecting overcurrent applied on the integrated
sensor primary. In case of OCD detection, the OCDINT or OCDEXT is pulled to ground. During normal operation
the OCD voltage remains at VDD. This OCD feature is available for SOIC16 version only.
The two OCD functions are able to react to an overcurrent event within few us of response time. To avoid
false alarm, the overcurrent has to be maintained at least 1µs for the detection to occur. After detection
by the sensor the output flag is maintained for 10µs of dwell time. This allows the overcurrent to be easily
detected at microcontroller level.
The following table offers a comparison between OCDINT and OCDEXT:
OCDINT
OCDEXT
Min
Max
Min
Max
Typical Application
Short-circuit detection
Out-of-range detection
Overcurrent effect
OCDINT pin to VSS
OCDEXT pin to VSS
Detection mode
Bidirectional
Unidirectional / bidirectional
Accuracy
Lower
Higher
Threshold trimming
EEPROM
Voltage divider on VOCEXT
Response time
1.4µs
2.1µs
10µs typical
Required Input holding time
1µs
10µs minimum
OCD output dwell time
7 µs
14 µs
10µs typical
Table 1: Comparison between OCDINT and OCDEXT performances
1
More information can be found in Application Note AN91220_OverCurrentDetection on
www.melexis.com
Meleiis "
wsmm mcwmm
MLX91221 Integrated Current Sensor IC
Datasheet
Page 28 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
11.2. Electrical Specifications
DC Operating Parameters at VDD = 3.3V (unless otherwise specified) and for TA as specified by the Temperature
suffix (K).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OCD_INT Internal ON
Resistance
= 1 mA
60
90
150
Ω
OCD_EXT Internal ON
Resistance
= 1 mA
160
190
280
Ω
VOC_EXT Voltage Range
VOC_EXT
0.3
1.2
V
11.3. Internal Overcurrent Detection Principle
The internal OCD takes fixed threshold voltage values predefined in the EEPROM and do not require any
extra components. The OCDINT implementation allows detecting overcurrent outside of the output
measurement range of the sensor and is therefore suitable for large current peaks as occurring during
short-circuit. If the theoretical sensor output overcomes the OCDINT voltage threshold, the overcurrent
event is flagged on OCDINT pin. The default OCD threshold voltages are defined as follow, but other values
can be set on request. The overcurrent threshold in ampere is deduced from the sensitivity of the sensor
[mV/A] and the OCDINT threshold voltage.
Sensor configuration
Min.
Max.
OCDINT
Threshold
[% FS]
VDD = 3.3V / VREF = 1.65V
43
368
Table 2: OCDINT factory programmable range
Sensor reference
Sensitivity
[mV/A]
OCDINT Threshold Current
[%
]
OCDINT Threshold
Current [A]
MLX91221KDF-ABF-010
120
100
10
MLX91221KDF-ABF-020
62.5
100.4
20.1
MLX91221KDF-ABx-120
62.5
140
28
vocien
> Vout
sun I Vlozvl Vilef
Vref
Vociexl
Ward
van
GND
-0—=—0—=—0-
Rext
Rext_hi
VOC_2xt
Meleiis
wrma rzmx'mH-V
y Vout
6ND
m;
Vref
Rext
Word
Vociext
Rext_uni
§
VDD
MLX91221 Integrated Current Sensor IC
Datasheet
Page 29 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
MLX91221KDF-ABF-025
50
100.4
20.1
MLX91221KDF-ABR-038
33.3
112.6
42.8
MLX91221KDF-ABx-050
25
114
57
MLX91221KDF-ABF-075
16.7
114
85.6
Table 3: OCDINT threshold currents for SOIC-16 versions
11.4. External Overcurrent Detection Principle
The external OCD uses the voltage applied on VOCEXT pin as threshold voltage. This translates into an
overcurrent threshold in ampere depending on the sensitivity of the sensor. A voltage divider on VOCEXT
allows defining the threshold voltage in a custom way. Depending on the voltage divider configuration, the
OCDEXT can be used either in bidirectional or unidirectional mode. The External OCD threshold is defined
within the measurement range of the sensor output. This feature is then suitable for out-of-range detection
where the OCD threshold remains close to the nominal current. It offers a better accuracy than OCDINT but
the response is slower. The below table presents the unidirectional and bidirectional external OCD
configurations. Please refer to section 13.1 and 13.3 for more details about the application diagram and
the recommended resistances.
Bidirectional configuration
Unidirectional configuration
Table 4: External OCD, bidirectionnal and unidirectional configurations
MeleXis'
wrma rzmx'mH-V
IP+
T T
|P+
|P+
VDD
VOUT
VREF
GND
——o—. VDD
. VOUT
5
I . VREF
5 c2 c1 c3
GND
MLX91221 Integrated Current Sensor IC
Datasheet
Page 30 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
12. Recommended Application Diagrams
12.1. Resistor and Capacitor Values
Part
Description
Value
Unit
C1
Supply capacitor, EMI, ESD
47
nF
C2
Decoupling, EMI, ESD
47
nF
C3
Decoupling, EMI, ESD
4.7
nF
REXT + REXT_BI / REXT_UNI
External OCD Resistor
~2001
kΩ
REXT_BI or REXT_UNI
External OCD Resistor
custom
-
Table 5: Resistor and Capacitor Values for Recommended Application Diagrams
1
High impedance needed due to the current source/sink limitation of the Vref pin.
12.2. SOIC8 Application Diagram
Figure 4: Recommended wiring for the MLX91221 in SOIC-8 package
Meleiis
VDD
1P+ .—
|P+ .—
10m
16
W OCDJNT OCDJNT
1P+ VOCJEXT 15 Rebe‘ Re“ I—OVOC,E>MLX91221 Integrated Current Sensor IC
Datasheet
Page 31 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
12.3. SOIC16 Application Diagram
Figure 5: Recommended wiring for the MLX91221 with Bidirectionnal External OCD
Figure 7: Recommended wiring for the MLX91221 with Unidirectionnal External OCD
Meleii§"""
MLX91221 Integrated Current Sensor IC
Datasheet
Page 32 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
13. Standard information regarding manufacturability
with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity
level according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles
according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s
(Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through
Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
MeleXis '
wsmm mcwmm
https: www.melexisLom en qualitvrenvironment soldering)
htt 5 com en uallt environment
MLX91221 Integrated Current Sensor IC
Datasheet
Page 33 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
Melexis recommends reviewing on our web site the General Guidelines soldering recommendation
(https://www.melexis.com/en/quality-environment/soldering).
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more
information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of
the use of certain Hazardous Substances) please visit the quality page on our website
(https://www.melexis.com/en/quality-environment).
14. ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling
semiconductor products.
Parameter
Symbol
Test Method
Value
Unit
Human Body ESD
Protection
ESDHBM
AEC-Q100-002 Rev D
2
kV
Charged Device Model
ESD Protection
ESDCDM
AEC-Q100-011 Rev B
500
V
Table 6: Electrostatic Discharge Ratings
Meleii?"
wsmm mcwmm
H H 5% El El—_
[ < oi="" e="" h="" h="" h="" a="" h="" a_="" _="" m="" kiwi/el="" fije-jkfig="" -------------="" -----------="">MLX91221 Integrated Current Sensor IC
Datasheet
Page 34 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
15. Package Information
15.1. SOIC-8 150mils - Package Dimensions
Figure 6 : SOIC8 Package Dimensions [inches]
[mm]
A
A1
A2
D
E
H
L
b
c
e
h
min
1.52
0.10
1.37
4.80
3.81
5.80
0.41
0.35
0.19
1.27
BSC
0.25
0°
max
1.73
0.25
1.57
4.98
3.99
6.20
1.27
0.49
0.25
0.50
8°
[inch]
A
A1
A2
D
E
H
L
b
c
e
h
min
.060
.004
.054
.189
.150
.228
.016
.014
.008
.050
BSC
.010
0°
max
.068
.010
.062
.196
.157
.244
.050
.019
.010
.020
8°
Meleii?"
wsmm mcwmm
Hm E H—'
0
HH HHH__ .
11*
:2- ___A2 A
~ 9 : -..1.;‘*—:—1L fiJ—ALLEE
------------
------------
MLX91221 Integrated Current Sensor IC
Datasheet
Page 35 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
15.2. SOIC-16 300mils - Package Dimensions
Figure 7 : SOIC16 Package Dimensions [inches]
[mm]
A
A1
A2
D
E
H
L
b
c
e
h
min
2.44
0.10
2.24
10.11
7.40
10.11
0.51
0.35
0.23
1.27
BSC
0.25
0°
max
2.64
0.30
2.44
10.46
7.60
10.51
1.02
0.48
0.32
0.71
8°
[inch]
A
A1
A2
D
E
H
L
b
c
e
h
min
.096
.004
.088
.398
.291
.398
.020
.014
.009
.050
BSC
.010
0°
max
.104
.012
.096
.412
.299
.414
.040
.019
.013
.028
8°
MeleXis ' '
www.melexis com
sales euroge@melexis.com sales usa@melexr's.com sales asia@melexis.com
MLX91221 Integrated Current Sensor IC
Datasheet
Page 36 of 36
DOC. № 3901091221, REVISION 1.0 - DECEMBER 7, 2020
16. Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale.
Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or
regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change
specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is
necessary to check with Melexis for current information. This product is intended for use in normal commercial
applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability
applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without
additional processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to
recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits,
loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with
or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or
any third party shall arise or flow out of Melexis’ rendering of technical or other services.
© 2020 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
For additional information, please contact your Sales team
Europe, Africa Americas Asia
sales_europe@melexis.com sales_usa@melexis.com sales_asia@melexis.com
P: +32 13 67 04 95 P: +1 603 223 2362 P: +86 21 5820 6899 (ext. 8024)
